Parametric results for: ne5520379a under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

SOURCE 12

13 hits Apply

Configuration (1)

SINGLE 13

13 hits Apply

DS Breakdown Voltage-Min (3)

3.8 V 4 6 V 2 15 V 6

Min (V) - Max (V)

13 hits Apply

Drain Current-Max (ID) (1)

1.5 A 13

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

13 hits Apply

Highest Frequency Band (1)

L BAND 12

13 hits Apply

R-PQMW-F4 3 R-XQMW-F4 9

13 hits Apply

e0 6 e6 2

13 hits Apply

Manufacturer (4)

California Eastern Laboratories (CEL) 2 NEC Compound Semiconductor Devices Ltd 4 NEC Electronics Group 4 Renesas Electronics Corporation 3

13 hits Apply

1 1

13 hits Apply

Number of Elements (1)

1 13

13 hits Apply

Number of Terminals (1)

4 12

13 hits Apply

ENHANCEMENT MODE 13

13 hits Apply

125.0 °C 2

13 hits Apply

PLASTIC/EPOXY 3 UNSPECIFIED 9

13 hits Apply

RECTANGULAR 12

13 hits Apply

MICROWAVE 12

13 hits Apply

Contact Manufacturer 1 Obsolete 7 Transferred 5

13 hits Apply

No 2 Yes 2

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 13

13 hits Apply

1.6 W 3 10 W 1 20 W 3

Min (W) - Max (W)

13 hits Apply

20 W 1

13 hits Apply

Surface Mount (1)

YES 13

13 hits Apply