Parametric results for: ne5550779a-a under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band Manufacturer Number of Elements Operating Mode Operating Temperature-Max Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs)

SOURCE 1

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Configuration (1)

SINGLE 1

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DS Breakdown Voltage-Min (1)

25 V 1

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Drain Current-Max (ID) (1)

2.1 A 1

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METAL-OXIDE SEMICONDUCTOR 1

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Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

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Manufacturer (1)

Renesas Electronics Corporation 1

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Number of Elements (1)

1 1

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ENHANCEMENT MODE 1

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150.0 °C 1

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Obsolete 1

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Yes 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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17.8 W 1

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