Parametric results for: np110n055pug under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 8

13 hits Apply

Configuration (2)

SINGLE 5 SINGLE WITH BUILT-IN DIODE 8

13 hits Apply

DS Breakdown Voltage-Min (1)

55 V 8

13 hits Apply

Drain Current-Max (ID) (1)

110 A 13

13 hits Apply

Drain-source On Resistance-Max (2)

2.4 mΩ 2 2.8 mΩ 6

Min (Ω) - Max (Ω)

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

13 hits Apply

TO-263AB 8

13 hits Apply

R-PSSO-G2 8

13 hits Apply

e0 2 e3 2

13 hits Apply

Manufacturer (2)

NEC Electronics Group 4 Renesas Electronics Corporation 9

13 hits Apply

Number of Elements (1)

1 13

13 hits Apply

Number of Terminals (1)

2 8

13 hits Apply

ENHANCEMENT MODE 12

13 hits Apply

175.0 °C 9

13 hits Apply

PLASTIC/EPOXY 8

13 hits Apply

RECTANGULAR 8

13 hits Apply

SMALL OUTLINE 8

13 hits Apply

Active 3 Not Recommended 3 Obsolete 3 Transferred 4

13 hits Apply

No 1 Yes 4

13 hits Apply

260 1 NOT SPECIFIED 3

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 13

13 hits Apply

288 W 9

13 hits Apply

Surface Mount (1)

YES 13

13 hits Apply