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Parametric » Transistors » Power Field-Effect Transistors

Parametric results for: ntb25p06t4 under Power Field-Effect Transistors

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Select Parts		Part Number

		NTB25P06T4G onsemi
		NTB25P06T4 onsemi
		NTB25P06T4 Rochester Electronics LLC

				Most Relevant								Technical							Compliance			Operating Conditions					Physical							Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JESD-30 Code	JESD-609 Code	Qualification Status	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Manufacturer Package Code	Reach Compliance Code	ECCN Code	HTS Code	Samacsys Manufacturer

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

27.5 A

82 mΩ

600 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

100 W

80 A

SWITCHING

SILICON

R-PSSO-G2

e3

Not Qualified

1

175 °C

-55 °C

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

ONSEMI

D2PAK 2 LEAD

D2PAK-3

3

418B-04

not_compliant

EAR99

8541.29.00.95

onsemi

Check for Price

No

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

27.5 A

82 mΩ

600 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

100 W

80 A

SWITCHING

SILICON

R-PSSO-G2

e0

Not Qualified

150 °C

235

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN LEAD

GULL WING

SINGLE

ON SEMICONDUCTOR

CASE 418B-04, D2PAK-3

3

CASE 418B-04

not_compliant

EAR99

8541.29.00.95

onsemi

Check for Price

No

No

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

27.5 A

82 mΩ

600 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

80 A

SWITCHING

SILICON

R-PSSO-G2

e0

COMMERCIAL

NOT SPECIFIED

240

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN LEAD

GULL WING

SINGLE

ROCHESTER ELECTRONICS LLC

CASE 418B-04, D2PAK-3

3

CASE 418B-04

unknown

Compare

onsemi

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

27.5 A

82 mΩ

600 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

100 W

80 A

SWITCHING

SILICON

R-PSSO-G2

e3

Not Qualified

1

175 °C

-55 °C

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

ONSEMI

D2PAK 2 LEAD

D2PAK-3

3

418B-04

not_compliant

EAR99

8541.29.00.95

onsemi

onsemi

Check for Price

No

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

27.5 A

82 mΩ

600 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

100 W

80 A

SWITCHING

SILICON

R-PSSO-G2

e0

Not Qualified

150 °C

235

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN LEAD

GULL WING

SINGLE

ON SEMICONDUCTOR

CASE 418B-04, D2PAK-3

3

CASE 418B-04

not_compliant

EAR99

8541.29.00.95

onsemi

Rochester Electronics LLC

Check for Price

No

No

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

27.5 A

82 mΩ

600 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

80 A

SWITCHING

SILICON

R-PSSO-G2

e0

COMMERCIAL

NOT SPECIFIED

240

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN LEAD

GULL WING

SINGLE

ROCHESTER ELECTRONICS LLC

CASE 418B-04, D2PAK-3

3

CASE 418B-04

unknown