Parametric results for: nthd4p02f under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

20 V 4

4 hits Apply

Drain Current-Max (ID) (1)

2.2 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

155 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

50 pF 2

4 hits Apply

R-PDSO-F8 2 R-XDSO-C8 2

4 hits Apply

e0 2 e3 2

4 hits Apply

Manufacturer (2)

onsemi 2 Rochester Electronics LLC 2

4 hits Apply

1 1 NOT SPECIFIED 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

8 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 2

4 hits Apply

-55.0 °C 2

4 hits Apply

PLASTIC/EPOXY 2 UNSPECIFIED 2

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 2 End Of Life 1 Obsolete 1

4 hits Apply

No 2 Yes 2

4 hits Apply

235 1 240 1 260 2

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 4

4 hits Apply

1.1 W 2

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply