Parametric results for: nvmfs2d3p04m8lt1g under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

40 V 1

1 hit Apply

Drain Current-Max (ID) (1)

32 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

3 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

R-PDSO-F5 1

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e3 1

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Manufacturer (1)

onsemi 1

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1 1

1 hit Apply

Number of Elements (1)

1 1

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Number of Terminals (1)

5 1

1 hit Apply

ENHANCEMENT MODE 1

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175.0 °C 1

1 hit Apply

-55.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

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SMALL OUTLINE 1

1 hit Apply

Active 1

1 hit Apply

Yes 1

1 hit Apply

260 1

1 hit Apply

Polarity/Channel Type (1)

P-CHANNEL 1

1 hit Apply

185 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply