Parametric results for: pmgd780sn under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

6 hits Apply

Drain Current-Max (ID) (1)

490 mA 6

6 hits Apply

Drain-source On Resistance-Max (1)

920 mΩ 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PDSO-G6 4

6 hits Apply

e3 5

6 hits Apply

Manufacturer (3)

Nexperia 2 NXP Semiconductors 3 Philips Semiconductors 1

6 hits Apply

1 5

6 hits Apply

Number of Elements (1)

2 4

6 hits Apply

Number of Terminals (1)

6 4

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

SMALL OUTLINE 4

6 hits Apply

Not Recommended 2 Transferred 4

6 hits Apply

Yes 1

6 hits Apply

260 5

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

410 mW 4

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply