Parametric results for: psmn0r9-30yld under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

AVALANCHE RATED, HIGH RELIABILITY 2

3 hits Apply

2987.0 mJ 2

3 hits Apply

DRAIN 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

3 hits Apply

Drain Current-Max (ID) (1)

300 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

1.09 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

R-PSSO-G4 2

3 hits Apply

e3 2

3 hits Apply

Manufacturer (2)

Nexperia 2 NXP Semiconductors 1

3 hits Apply

1 2

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

4 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

SMALL OUTLINE 2

3 hits Apply

Active 2 Transferred 1

3 hits Apply

260 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

Surface Mount (1)

YES 2

3 hits Apply