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PSMN1R5-30YLC,115
Nexperia
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$0.9358 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 30 V | 1 | 100 A | 2.05 mΩ | HIGH RELIABILITY, ULTRA LOW RESISTANCE | 147 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.008 kA | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | NEXPERIA | SOIC | SO8, LFPAK-4 | 4 | SOT669 | not_compliant | EAR99 | Nexperia | ||||||
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PSMN1R5-30YL,115
Nexperia
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$1.0679 | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 35 V | 1 | 100 A | 1.9 mΩ | 241 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 790 A | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | NEXPERIA | SOIC | LFPAK-4 | 4 | SOT669 | not_compliant | EAR99 | Nexperia | |||||||
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PSMN1R5-30YL
Nexperia
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Check for Price | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 35 V | 1 | 100 A | 1.9 mΩ | 241 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 790 A | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | NEXPERIA | SMALL OUTLINE, R-PSSO-G4 | not_compliant | EAR99 | Nexperia | 2017-02-01 | |||||||||
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PSMN1R5-30YL
NXP Semiconductors
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 35 V | 1 | 100 A | 1.9 mΩ | 241 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 790 A | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | NXP SEMICONDUCTORS | PLASTIC, LFPAK-4 | 235 | unknown | EAR99 | NXP | |||||||
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PSMN1R5-30YLC
Nexperia
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 30 V | 1 | 100 A | 2.05 mΩ | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 147 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.008 kA | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | NEXPERIA | not_compliant | EAR99 | Nexperia | 2017-02-01 | |||||||||
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PSMN1R5-30YLC
NXP Semiconductors
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 30 V | 1 | 100 A | 2.05 mΩ | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 147 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.008 kA | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | Not Qualified | 1 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | NXP SEMICONDUCTORS | PLASTIC, POWER-SO8, LFPAK-4 | 235 | unknown | EAR99 | NXP | |||||||
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PSMN1R5-30YL,115
NXP Semiconductors
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE | 1 | 100 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 109 W | e3 | 1 | 175 °C | 260 | 30 | TIN | NXP SEMICONDUCTORS | SOIC | 4 | SOT669 | not_compliant | EAR99 | ||||||||||||||||||||||
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PSMN1R5-30YLC,115
NXP Semiconductors
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE | 1 | 100 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 179 W | e3 | 1 | 175 °C | 260 | 30 | TIN | NXP SEMICONDUCTORS | SOIC | 4 | SOT669 | not_compliant | EAR99 |