Parametric results for: ptb20111 under RF Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 2

3 hits Apply

EMITTER 3

3 hits Apply

Collector Current-Max (IC) (1)

20 A 3

3 hits Apply

Collector-Emitter Voltage-Max (1)

25 V 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DC Current Gain-Min (hFE) (1)

20.0 1

3 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 3

3 hits Apply

R-CDFM-F2 3

3 hits Apply

e3 1

3 hits Apply

Manufacturer (3)

Advanced Semiconductor Inc 1 Ericsson 1 Infineon Technologies AG 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 3

3 hits Apply

150.0 °C 1

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Active 1 Transferred 2

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

NPN 3

3 hits Apply

159 W 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply