Parametric results for: rf1s50n06 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 8 LOGIC LEVEL COMPATIBLE 4

20 hits Apply

DRAIN 18

20 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 18

20 hits Apply

DS Breakdown Voltage-Min (2)

60 V 17 80 V 1

Min (V) - Max (V)

20 hits Apply

Drain Current-Max (ID) (1)

50 A 20

20 hits Apply

Drain-source On Resistance-Max (1)

22 mΩ 18

20 hits Apply

METAL-OXIDE SEMICONDUCTOR 20

20 hits Apply

TO-262AA 4 TO-263AB 14

20 hits Apply

R-PSIP-T3 4 R-PSSO-G2 14

20 hits Apply

e0 13 e3 1

20 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 5 Harris Semiconductor 6 Intersil Corporation 6 Rochester Electronics LLC 3

20 hits Apply

1 1 NOT SPECIFIED 1

20 hits Apply

Number of Elements (1)

1 20

20 hits Apply

Number of Terminals (2)

2 14 8 4

20 hits Apply

ENHANCEMENT MODE 20

20 hits Apply

175.0 °C 14

20 hits Apply

PLASTIC/EPOXY 18

20 hits Apply

RECTANGULAR 18

20 hits Apply

IN-LINE 4 SMALL OUTLINE 14

20 hits Apply

Active 3 Obsolete 13 Transferred 4

20 hits Apply

No 1

20 hits Apply

NOT SPECIFIED 1

20 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 20

20 hits Apply

131 W 4

20 hits Apply

131 W 6 142 W 2 145 W 5

Min (W) - Max (W)

20 hits Apply

Surface Mount (2)

NO 6 YES 14

20 hits Apply