Parametric results for: rf4g100bgtcr under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

8.4 mJ 1

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DRAIN 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

40 V 1

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Drain Current-Max (ID) (1)

10 A 1

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Drain-source On Resistance-Max (1)

23 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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23 pF 1

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S-PDSO-N6 1

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e3 1

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Manufacturer (1)

ROHM Semiconductor 1

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1 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

6 1

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ENHANCEMENT MODE 1

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150.0 °C 1

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-55.0 °C 1

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PLASTIC/EPOXY 1

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SQUARE 1

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SMALL OUTLINE 1

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Active 1

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260 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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2 W 1

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Surface Mount (1)

YES 1

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