Parametric results for: rfg60 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1 AVALANCHE RATED, ESD PROTECTED 4 MEGAFET 1

9 hits Apply

DRAIN 9

9 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 9

9 hits Apply

DS Breakdown Voltage-Min (3)

30 V 3 50 V 3 60 V 3

Min (V) - Max (V)

9 hits Apply

Drain Current-Max (ID) (1)

60 A 9

9 hits Apply

Drain-source On Resistance-Max (2)

27 mΩ 3 30 mΩ 6

Min (Ω) - Max (Ω)

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

TO-247 7 TO-254AA 2

9 hits Apply

R-MSFM-P3 2 R-PSFM-T3 7

9 hits Apply

e0 9

9 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 3 Harris Semiconductor 3 Intersil Corporation 3

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (1)

3 9

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

175.0 °C 9

9 hits Apply

METAL 2 PLASTIC/EPOXY 7

9 hits Apply

RECTANGULAR 9

9 hits Apply

FLANGE MOUNT 9

9 hits Apply

Obsolete 9

9 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 9

9 hits Apply

176 W 1 215 W 3

Min (W) - Max (W)

9 hits Apply

176 W 3 190 W 2 215 W 4

Min (W) - Max (W)

9 hits Apply

Surface Mount (1)

NO 9

9 hits Apply