Parametric results for: rfp4n05 under Other Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 2

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DRAIN 7

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Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 7

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DS Breakdown Voltage-Min (1)

50 V 7

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Drain Current-Max (ID) (1)

4 A 9

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Drain-source On Resistance-Max (1)

800 mΩ 7

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METAL-OXIDE SEMICONDUCTOR 9

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30 pF 1 40 pF 1

Min (pF) - Max (pF)

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TO-220AB 7

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R-PSFM-T3 7

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e0 8

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Manufacturer (6)

Fairchild Semiconductor Corporation 2 General Electric Solid State 2 Harris Semiconductor 2 Intersil Corporation 2 Rochester Electronics LLC 1 Thomson Consumer Electronics 2

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NOT SPECIFIED 1

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Number of Elements (1)

1 9

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Number of Terminals (1)

3 7

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ENHANCEMENT MODE 9

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150.0 °C 7

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PLASTIC/EPOXY 7

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RECTANGULAR 7

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FLANGE MOUNT 7

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Active 1 Obsolete 8 Transferred 2

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No 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 9

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25 W 2

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25 W 7

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Surface Mount (1)

NO 9

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