Parametric results for: rn1107mfv under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

BUILT IN BIAS RESISTANCE RATIO IS 4.7 2 BUILT-IN BIAS RESISTOR RATIO IS 4.7 1

5 hits Apply

Collector Current-Max (IC) (1)

100 mA 4

5 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 3

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 3

5 hits Apply

DC Current Gain-Min (hFE) (1)

80.0 4

5 hits Apply

R-PDSO-F3 3

5 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 5

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

3 3

5 hits Apply

150.0 °C 1

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

SMALL OUTLINE 3

5 hits Apply

Active 3 Obsolete 2

5 hits Apply

Yes 1

5 hits Apply

NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

NPN 4

5 hits Apply

150 mW 2

5 hits Apply

Surface Mount (1)

YES 4

5 hits Apply