Parametric results for: rn1115, under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTANCE RATIO IS 4.55 1 BUILT-IN BIAS RESISTOR RATIO IS 0.22 2 BUILT-IN BIAS RESISTOR RATIO IS 4.54 1 BUILT-IN BIAS RESISTOR RATIO IS 4.55 4

19 hits Apply

Collector Current-Max (IC) (1)

100 mA 16

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6 pF 1

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Collector-Emitter Voltage-Max (1)

50 V 8

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Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 8

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DC Current Gain-Min (hFE) (1)

50.0 16

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R-PDSO-F3 5 R-PDSO-G3 3

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e0 1

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Manufacturer (1)

Toshiba America Electronic Components 19

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Number of Elements (1)

1 16

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Number of Terminals (1)

3 8

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150.0 °C 4

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PLASTIC/EPOXY 8

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RECTANGULAR 8

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SMALL OUTLINE 8

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Active 15 Obsolete 4

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No 1 Yes 1

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NOT SPECIFIED 10

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Polarity/Channel Type (1)

NPN 16

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100 mW 9 150 mW 2

Min (W) - Max (W)

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Surface Mount (1)

YES 16

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Transition Frequency-Nom (fT) (1)

250 MHz 8

19 hits Apply