Parametric results for: rqa0010 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

SOURCE 2

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

16 V 2

3 hits Apply

Drain Current-Max (ID) (1)

1.2 A 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 2

3 hits Apply

R-PSSO-F3 2

3 hits Apply

Manufacturer (1)

Renesas Electronics Corporation 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

SMALL OUTLINE 2

3 hits Apply

Obsolete 3

3 hits Apply

Yes 3

3 hits Apply

NOT SPECIFIED 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

9 W 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply