Parametric results for: si1012x-t1 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW THRESHOLD 2

7 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

7 hits Apply

DS Breakdown Voltage-Min (1)

20 V 3

7 hits Apply

Drain Current-Max (ID) (1)

500 mA 4

7 hits Apply

Drain-source On Resistance-Max (1)

700 mΩ 3

7 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

7 hits Apply

R-PDSO-F3 2 R-PDSO-G3 1

7 hits Apply

e0 1 e3 2

7 hits Apply

Manufacturer (4)

LRC Leshan Radio Co Ltd 2 Tak Cheong Electronics (Holdings) Co Ltd 2 Vishay Intertechnologies 1 Vishay Siliconix 2

7 hits Apply

1 2

7 hits Apply

Number of Elements (1)

1 4

7 hits Apply

Number of Terminals (1)

3 3

7 hits Apply

ENHANCEMENT MODE 3

7 hits Apply

150.0 °C 3

7 hits Apply

PLASTIC/EPOXY 3

7 hits Apply

RECTANGULAR 3

7 hits Apply

SMALL OUTLINE 3

7 hits Apply

Active 4 End Of Life 2 Obsolete 1

7 hits Apply

Yes 1

7 hits Apply

260 2 NOT SPECIFIED 2

7 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

7 hits Apply

250 mW 1 275 mW 2

Min (W) - Max (W)

7 hits Apply

Surface Mount (1)

YES 4

7 hits Apply