Parametric results for: si4486eyt1 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

100 V 2

3 hits Apply

Drain Current-Max (ID) (1)

5.4 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

25 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PDSO-G8 2

3 hits Apply

e0 2 e3 1

3 hits Apply

Manufacturer (2)

Vishay Intertechnologies 1 Vishay Siliconix 2

3 hits Apply

1 2

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

8 2

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 2

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

SMALL OUTLINE 2

3 hits Apply

Obsolete 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

3.8 W 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply