Parametric results for: si7884dp-t1 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

FAST SWITCHING 2

4 hits Apply

45.0 mJ 2

4 hits Apply

DRAIN 2

4 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

40 V 2

4 hits Apply

Drain Current-Max (ID) (1)

12 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

7 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-XDSO-C5 2

4 hits Apply

e0 2 e3 2

4 hits Apply

Manufacturer (2)

Vishay Intertechnologies 2 Vishay Siliconix 2

4 hits Apply

1 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

5 2

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 2

4 hits Apply

UNSPECIFIED 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

SMALL OUTLINE 2

4 hits Apply

Obsolete 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

5.2 W 2

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply