Parametric results for: sihg20n50 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

204.0 mJ 1 361.0 mJ 2

Min (mJ) - Max (mJ)

3 hits Apply

DRAIN 1

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

500 V 3

3 hits Apply

Drain Current-Max (ID) (2)

19 A 1 20 A 2

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (2)

184 mΩ 1 270 mΩ 2

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-247AC 3

3 hits Apply

R-PSFM-T3 3

3 hits Apply

Manufacturer (2)

Vishay Intertechnologies 2 Vishay Siliconix 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Active 1 End Of Life 2

3 hits Apply

Yes 1

3 hits Apply

260 2 NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

292 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply