Parametric results for: siz920dt-t1-ge3 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

31.0 mJ 2

2 hits Apply

DRAIN SOURCE 2

2 hits Apply

Configuration (1)

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS 2

2 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

2 hits Apply

Drain Current-Max (ID) (1)

40 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

7.1 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-PDSO-C6 2

2 hits Apply

Manufacturer (2)

Vishay Intertechnologies 1 Vishay Siliconix 1

2 hits Apply

Number of Elements (1)

2 2

2 hits Apply

Number of Terminals (1)

6 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Obsolete 2

2 hits Apply

NOT SPECIFIED 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply