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SPB02N60C3E3045A
Infineon Technologies AG
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 1.8 A | 3 Ω | AVALANCHE RATED | 50 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 5.4 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | TO-263, 3 PIN | compliant | EAR99 | |||||||||||||||
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SPB02N60C3
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 1.8 A | 3 Ω | AVALANCHE RATED | 50 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 5.4 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | COMMERCIAL | NOT SPECIFIED | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | PLASTIC, TO-263, 3 PIN | unknown | D2PAK | 4 | |||||||
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SPB02N60C3ATMA1
Infineon Technologies AG
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Check for Price | No | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 1.8 A | 3 Ω | AVALANCHE RATED | 50 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 5.4 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | PLASTIC, TO-263, 3 PIN | not_compliant | EAR99 | D2PAK | 4 | |||||||
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SPB02N60C3
Infineon Technologies AG
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 1.8 A | 3 Ω | AVALANCHE RATED | 50 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 5.4 A | SILICON | 100 ns | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | TO-263, 3/2 PIN | not_compliant | EAR99 | D2PAK | 4 |