Parametric results for: ssm6j505nu under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

12 V 3

4 hits Apply

Drain Current-Max (ID) (1)

12 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

16 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

S-PDSO-N6 3

4 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

6 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 1

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

SQUARE 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Active 4

4 hits Apply

NOT SPECIFIED 3

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 4

4 hits Apply

2.5 W 1

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply