Parametric results for: std13nm60n under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

162.0 mJ 1 200.0 mJ 1

Min (mJ) - Max (mJ)

3 hits Apply

DRAIN 1

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

600 V 2

3 hits Apply

Drain Current-Max (ID) (1)

11 A 3

3 hits Apply

Drain-source On Resistance-Max (2)

360 mΩ 1 380 mΩ 1

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-252 2

3 hits Apply

R-PSSO-G2 2

3 hits Apply

e3 3

3 hits Apply

Manufacturer (1)

STMicroelectronics 3

3 hits Apply

1 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 2

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

SMALL OUTLINE 2

3 hits Apply

Active 2 Obsolete 1

3 hits Apply

260 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

90 W 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply