Parametric results for: stp55ne06 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

4 hits Apply

200.0 mJ 2 250.0 mJ 2

Min (mJ) - Max (mJ)

4 hits Apply

ISOLATED 2

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

4 hits Apply

Drain Current-Max (ID) (3)

28 A 1 30 A 1 55 A 2

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (2)

22 mΩ 2 28 mΩ 2

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-220AB 4

4 hits Apply

R-PSFM-T3 4

4 hits Apply

e0 3 e3 1

4 hits Apply

Manufacturer (1)

STMicroelectronics 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

175.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Obsolete 4

4 hits Apply

No 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

35 W 2 130 W 2

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply