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Parametric » Transistors » Power Field-Effect Transistors

Parametric results for: sud19p06-60l-e3 under Power Field-Effect Transistors

Select parts from the table below to compare.

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Select Parts		Part Number

		SUD19P06-60L-E3 Vishay Siliconix
		SUD19P06-60L-E3 Vishay Semiconductors
		SUD19P06-60L-E3 Vishay Intertechnologies

				Most Relevant								Technical							Compliance				Operating Conditions				Physical							Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Qualification Status	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	Samacsys Manufacturer

Yes

Yes

Not Recommended

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

19 A

60 mΩ

24.2 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

46 W

30 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

e3

Not Qualified

1

175 °C

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

VISHAY SILICONIX

TO-252

SMALL OUTLINE, R-PSSO-G2

4

unknown

EAR99

Vishay

Check for Price

Yes

Transferred

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

19 A

60 mΩ

24.2 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

30 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

e3

Not Qualified

1

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN OVER NICKEL

GULL WING

SINGLE

VISHAY SEMICONDUCTORS

TO-252

LEAD FREE PACKAGE-3

4

compliant

EAR99

Vishay

Check for Price

Yes

Yes

Not Recommended

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

19 A

60 mΩ

24.2 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

46 W

30 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

e3

Not Qualified

1

175 °C

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

VISHAY INTERTECHNOLOGY INC

TO-252

ROHS COMPLIANT PACKAGE-3

4

compliant

EAR99

Vishay

Compare

SUD19P06-60L-E3

Vishay Siliconix

Yes

Yes

Not Recommended

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

19 A

60 mΩ

24.2 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

46 W

30 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

e3

Not Qualified

1

175 °C

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

VISHAY SILICONIX

TO-252

SMALL OUTLINE, R-PSSO-G2

4

unknown

EAR99

Vishay

SUD19P06-60L-E3

Vishay Semiconductors

Check for Price

Yes

Transferred

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

19 A

60 mΩ

24.2 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

30 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

e3

Not Qualified

1

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN OVER NICKEL

GULL WING

SINGLE

VISHAY SEMICONDUCTORS

TO-252

LEAD FREE PACKAGE-3

4

compliant

EAR99

Vishay

SUD19P06-60L-E3

Vishay Intertechnologies

Check for Price

Yes

Yes

Not Recommended

P-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

60 V

1

19 A

60 mΩ

24.2 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

46 W

30 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

e3

Not Qualified

1

175 °C

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

VISHAY INTERTECHNOLOGY INC

TO-252

ROHS COMPLIANT PACKAGE-3

4

compliant

EAR99

Vishay