Parametric results for: sud50n02-06 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

101.0 mJ 2

5 hits Apply

DRAIN 2

5 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 2

5 hits Apply

DS Breakdown Voltage-Min (1)

20 V 2

5 hits Apply

Drain Current-Max (ID) (1)

26 A 3

5 hits Apply

Drain-source On Resistance-Max (1)

6 mΩ 2

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-252 2

5 hits Apply

R-PSSO-G2 2

5 hits Apply

e0 1 e3 2

5 hits Apply

Manufacturer (2)

Vishay Intertechnologies 3 Vishay Siliconix 2

5 hits Apply

1 2

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

2 2

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

175.0 °C 5

5 hits Apply

PLASTIC/EPOXY 2

5 hits Apply

RECTANGULAR 2

5 hits Apply

SMALL OUTLINE 2

5 hits Apply

Obsolete 5

5 hits Apply

Yes 1

5 hits Apply

260 2

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

65 W 3 100 W 2

Min (W) - Max (W)

5 hits Apply

Surface Mount (1)

YES 3

5 hits Apply