Parametric results for: tk25v60x under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

305.0 mJ 1 306.0 mJ 1

Min (mJ) - Max (mJ)

4 hits Apply

DRAIN 2

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

600 V 2

4 hits Apply

Drain Current-Max (ID) (1)

25 A 2

4 hits Apply

Drain-source On Resistance-Max (2)

135 mΩ 1 150 mΩ 1

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

4 hits Apply

S-PSSO-N4 2

4 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 4

4 hits Apply

Number of Elements (1)

1 2

4 hits Apply

Number of Terminals (1)

4 2

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

SQUARE 2

4 hits Apply

SMALL OUTLINE 2

4 hits Apply

Active 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

4 hits Apply

Surface Mount (1)

YES 2

4 hits Apply