Parametric results for: tk31n60w under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

437.0 mJ 3

4 hits Apply

DRAIN 3

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

600 V 3

4 hits Apply

Drain Current-Max (ID) (1)

30.8 A 4

4 hits Apply

Drain-source On Resistance-Max (2)

88 mΩ 1 99 mΩ 2

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

9.5 pF 1

4 hits Apply

TO-247 3

4 hits Apply

R-PSFM-T3 3

4 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

FLANGE MOUNT 3

4 hits Apply

Active 4

4 hits Apply

NOT SPECIFIED 3

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

230 W 3

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply