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1 - 10 of 11 results
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TK33S10N1Z,LQ
Toshiba America Electronic Components
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$1.1017 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 33 A | 9.7 mΩ | 66.5 mJ | 140 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 99 A | SWITCHING | SILICON | R-PSSO-G2 | AEC-Q101 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | TOSHIBA CORP | DPAK-3/2 | unknown | EAR99 | Toshiba | |||||||||||||||
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IXTK33N50
IXYS Corporation
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$17.9772 | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 500 V | 1 | 33 A | 170 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 416 W | 416 W | 132 A | SWITCHING | SILICON | TO-264AA | R-PSFM-T3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | IXYS CORP | TO-264AA, 3 PIN | compliant | EAR99 | TO-264AA | 3 | 8541.29.00.95 | ||||||||||
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TK33S10N1L
Toshiba America Electronic Components
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 33 A | 16.2 mΩ | 101 mJ | 145 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 99 A | SWITCHING | SILICON | R-PSSO-G2 | AEC-Q101 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | TOSHIBA CORP | , | unknown | EAR99 | |||||||||||||||||
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TK33S10N1L,LQ
Toshiba America Electronic Components
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Check for Price | Active | TOSHIBA CORP | , | unknown | EAR99 | Toshiba | |||||||||||||||||||||||||||||||||||||||||
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TK33S10N1Z
Toshiba America Electronic Components
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 33 A | 9.7 mΩ | 66.5 mJ | 140 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 99 A | SWITCHING | SILICON | R-PSSO-G2 | AEC-Q101 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | TOSHIBA CORP | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | Toshiba | ||||||||||||||||
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IXTK33N50
Littelfuse Inc
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 500 V | 1 | 33 A | 170 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 416 W | 416 W | 132 A | SWITCHING | SILICON | TO-264AA | R-PSFM-T3 | e1 | Not Qualified | 150 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | THROUGH-HOLE | SINGLE | LITTELFUSE INC | FLANGE MOUNT, R-PSFM-T3 | compliant | EAR99 | LITTELFUSE | 8541.29.00.95 | ||||||||||
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TK33S10N1L,LXHQ
Toshiba America Electronic Components
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 33 A | 16.2 mΩ | 101 mJ | 145 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 99 A | SWITCHING | SILICON | R-PSSO-G2 | AEC-Q101 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | TOSHIBA CORP | DPAK-3/2 | unknown | EAR99 | Toshiba | ||||||||||||||||
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IXTK33N45
IXYS Corporation
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 450 V | 1 | 33 A | 160 mΩ | FAST SWITCHING | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 416 W | 132 A | SWITCHING | SILICON | TO-264AA | R-PSFM-T3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | IXYS CORP | FLANGE MOUNT, R-PSFM-T3 | unknown | EAR99 | |||||||||||||||||
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TK33S10N1H
Toshiba America Electronic Components
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 33 A | 9.7 mΩ | 66.5 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 99 A | SWITCHING | SILICON | R-PSSO-G2 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | TOSHIBA CORP | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | 2016-03-07 | ||||||||||||||||||||
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TK33S10N1H,LQ
Toshiba America Electronic Components
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Check for Price | Active | TOSHIBA CORP | unknown |