Parametric results for: tp0604n3 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE 2 LOGIC LEVEL COMPATIBLE, LOW THRESHOLD 2 LOW THRESHOLD 15

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 19

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DS Breakdown Voltage-Min (1)

40 V 19

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Drain Current-Max (ID) (2)

430 mA 4 750 mA 15

Min (A) - Max (A)

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Drain-source On Resistance-Max (1)

2 Ω 19

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METAL-OXIDE SEMICONDUCTOR 19

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60 pF 19

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TO-92 19

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O-PBCY-T3 17 O-PBCY-W3 2

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e0 17 e3 9

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Manufacturer (2)

Microchip Technology Inc 6 Supertex Inc 23

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Number of Elements (1)

1 19

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Number of Terminals (1)

3 19

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ENHANCEMENT MODE 19

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150.0 °C 18

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-55.0 °C 1

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PLASTIC/EPOXY 19

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ROUND 19

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CYLINDRICAL 19

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Active 6 Obsolete 17 Transferred 6

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Yes 1

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Polarity/Channel Type (1)

P-CHANNEL 19

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740 mW 1 1 W 15

Min (W) - Max (W)

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740 mW 1 1 W 2

Min (W) - Max (W)

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Surface Mount (1)

NO 19

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