Parametric results for: tph4r50anh under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

102.0 mJ 1 274.0 mJ 4

Min (mJ) - Max (mJ)

9 hits Apply

DRAIN 4

9 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 5

9 hits Apply

DS Breakdown Voltage-Min (1)

100 V 5

9 hits Apply

Drain Current-Max (ID) (2)

60 A 8 92 A 1

Min (A) - Max (A)

9 hits Apply

Drain-source On Resistance-Max (1)

4.5 mΩ 5

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

63 pF 4

9 hits Apply

S-PDSO-F5 1 S-PDSO-F8 4

9 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 9

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Number of Elements (1)

1 9

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Number of Terminals (2)

5 1 8 4

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ENHANCEMENT MODE 9

9 hits Apply

150.0 °C 8

9 hits Apply

PLASTIC/EPOXY 5

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SQUARE 5

9 hits Apply

SMALL OUTLINE 5

9 hits Apply

Active 9

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

78 W 7 170 W 1

Min (W) - Max (W)

9 hits Apply

Surface Mount (1)

YES 9

9 hits Apply