Parametric results for: tsm4953d under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

ULTRA-LOW RESISTANCE 1

4 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 1

4 hits Apply

Drain Current-Max (ID) (1)

4.9 A 1

4 hits Apply

Drain-source On Resistance-Max (1)

60 mΩ 1

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

4 hits Apply

R-PDSO-G8 1

4 hits Apply

Manufacturer (1)

Taiwan Semiconductor 4

4 hits Apply

Number of Elements (1)

2 1

4 hits Apply

Number of Terminals (1)

8 1

4 hits Apply

ENHANCEMENT MODE 1

4 hits Apply

PLASTIC/EPOXY 1

4 hits Apply

RECTANGULAR 1

4 hits Apply

SMALL OUTLINE 1

4 hits Apply

Active 2 Not Recommended 1 Obsolete 1

4 hits Apply

260 3

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 1

4 hits Apply

Surface Mount (1)

YES 1

4 hits Apply