Parametric results for: upa1760 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

6.4 mJ 2

11 hits Apply

Configuration (2)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 2 SINGLE 6

11 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

11 hits Apply

Drain Current-Max (ID) (1)

8 A 8

11 hits Apply

Drain-source On Resistance-Max (1)

42 mΩ 2

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

11 hits Apply

R-PDSO-G8 2

11 hits Apply

e0 1 e6 2

11 hits Apply

Manufacturer (2)

NEC Electronics Group 1 Renesas Electronics Corporation 10

11 hits Apply

Number of Elements (2)

1 6 2 2

Min - Max

11 hits Apply

Number of Terminals (1)

8 2

11 hits Apply

ENHANCEMENT MODE 5

11 hits Apply

150.0 °C 7

11 hits Apply

PLASTIC/EPOXY 2

11 hits Apply

RECTANGULAR 2

11 hits Apply

SMALL OUTLINE 2

11 hits Apply

Active 1 Obsolete 9 Transferred 1

11 hits Apply

Yes 3

11 hits Apply

260 1 NOT SPECIFIED 1

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

11 hits Apply

2 W 7

11 hits Apply

Surface Mount (1)

YES 8

11 hits Apply