Parametric results for: ut90 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

300.0 mJ 12

26 hits Apply

DRAIN 2

26 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 12

26 hits Apply

DS Breakdown Voltage-Min (1)

30 V 12

26 hits Apply

Drain Current-Max (ID) (1)

90 A 14

26 hits Apply

Drain-source On Resistance-Max (1)

4.5 mΩ 12

26 hits Apply

METAL-OXIDE SEMICONDUCTOR 14

26 hits Apply

TO-251 2 TO-252 4 TO-263AB 4

26 hits Apply

R-PDSO-N5 2 R-PSIP-T3 2 R-PSSO-G2 8

26 hits Apply

Manufacturer (1)

Unisonic Technologies Co Ltd 26

26 hits Apply

Number of Elements (1)

1 14

26 hits Apply

Number of Terminals (3)

2 8 3 2 5 2

26 hits Apply

ENHANCEMENT MODE 14

26 hits Apply

150.0 °C 14

26 hits Apply

-55.0 °C 12

26 hits Apply

PLASTIC/EPOXY 12

26 hits Apply

RECTANGULAR 12

26 hits Apply

IN-LINE 2 SMALL OUTLINE 10

26 hits Apply

Active 26

26 hits Apply

NOT SPECIFIED 5

26 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 14

26 hits Apply

21 W 2 187 W 8 220 W 4

Min (W) - Max (W)

26 hits Apply

Surface Mount (2)

NO 2 YES 12

26 hits Apply