Parametric results for: vn3205n3 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH INPUT IMPEDANCE 31

31 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 31

31 hits Apply

DS Breakdown Voltage-Min (1)

50 V 31

31 hits Apply

Drain Current-Max (ID) (1)

1.2 A 31

31 hits Apply

Drain-source On Resistance-Max (1)

300 mΩ 31

31 hits Apply

METAL-OXIDE SEMICONDUCTOR 31

31 hits Apply

30 pF 31

31 hits Apply

TO-92 31

31 hits Apply

O-PBCY-T3 29 O-PBCY-W3 2

31 hits Apply

e0 17 e3 12

31 hits Apply

Manufacturer (2)

Microchip Technology Inc 7 Supertex Inc 24

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Number of Elements (1)

1 31

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Number of Terminals (1)

3 31

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ENHANCEMENT MODE 31

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150.0 °C 15

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-55.0 °C 13

31 hits Apply

PLASTIC/EPOXY 31

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ROUND 31

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CYLINDRICAL 31

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Active 7 Obsolete 17 Transferred 7

31 hits Apply

Yes 2

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Polarity/Channel Type (1)

N-CHANNEL 31

31 hits Apply

1 W 5

31 hits Apply

1 W 14

31 hits Apply

Surface Mount (1)

NO 31

31 hits Apply