Parametric results for: vp0550n3-g under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 13

13 hits Apply

DS Breakdown Voltage-Min (1)

500 V 13

13 hits Apply

Drain Current-Max (ID) (1)

54 mA 13

13 hits Apply

Drain-source On Resistance-Max (1)

125 Ω 13

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

13 hits Apply

10 pF 13

13 hits Apply

TO-92 13

13 hits Apply

O-PBCY-T3 13

13 hits Apply

e3 2

13 hits Apply

Manufacturer (2)

Microchip Technology Inc 7 Supertex Inc 6

13 hits Apply

Number of Elements (1)

1 13

13 hits Apply

Number of Terminals (1)

3 13

13 hits Apply

ENHANCEMENT MODE 13

13 hits Apply

150.0 °C 7

13 hits Apply

-55.0 °C 7

13 hits Apply

PLASTIC/EPOXY 13

13 hits Apply

ROUND 13

13 hits Apply

CYLINDRICAL 13

13 hits Apply

Active 7 Transferred 6

13 hits Apply

Yes 2

13 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 13

13 hits Apply

1 W 1

13 hits Apply

Surface Mount (1)

NO 13

13 hits Apply