Parametric results for: vq1004j under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

60 V 2

2 hits Apply

Drain Current-Max (ID) (1)

460 mA 2

2 hits Apply

Drain-source On Resistance-Max (1)

3.5 Ω 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

10 pF 1

2 hits Apply

R-PDIP-T14 2

2 hits Apply

e0 1

2 hits Apply

Manufacturer (2)

Supertex Inc 1 Temic Semiconductors 1

2 hits Apply

Number of Elements (1)

4 1

2 hits Apply

Number of Terminals (1)

14 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

IN-LINE 2

2 hits Apply

Obsolete 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

1.3 W 1

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply