Parametric results for: vq1004p under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 5

6 hits Apply

Drain Current-Max (ID) (1)

460 mA 6

6 hits Apply

Drain-source On Resistance-Max (1)

3.5 Ω 5

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

10 pF 4

6 hits Apply

R-CDIP-T14 4 R-PDIP-T14 1

6 hits Apply

e0 3

6 hits Apply

Manufacturer (4)

Supertex Inc 2 Temic Semiconductors 1 Vishay Intertechnologies 1 Vishay Siliconix 2

6 hits Apply

Number of Elements (1)

4 4

6 hits Apply

Number of Terminals (1)

14 5

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 5

6 hits Apply

CERAMIC, METAL-SEALED COFIRED 4 PLASTIC/EPOXY 1

6 hits Apply

RECTANGULAR 5

6 hits Apply

IN-LINE 5

6 hits Apply

Obsolete 5 Transferred 1

6 hits Apply

No 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

1.3 W 3

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply