Parametric results for: vt6k1t2cr under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 1

1 hit Apply

DS Breakdown Voltage-Min (1)

20 V 1

1 hit Apply

Drain Current-Max (ID) (1)

100 mA 1

1 hit Apply

Drain-source On Resistance-Max (1)

4.2 Ω 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

R-PDSO-F6 1

1 hit Apply

e1 1

1 hit Apply

Manufacturer (1)

ROHM Semiconductor 1

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1 1

1 hit Apply

Number of Elements (1)

2 1

1 hit Apply

Number of Terminals (1)

6 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

PLASTIC/EPOXY 1

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RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

End Of Life 1

1 hit Apply

260 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply