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Memory IC Type: DRAM MODULE,PAGE MODE DRAM,EDO DRAM
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HY51V18163HGJ-7
 SK Hynix Inc 		Check for Price No Obsolete 16.7772 Mbit 16 1MX16 3.3 V 70 ns 1024 FAST PAGE WITH EDO EDO DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH COMMON 1 1 1000000 1.0486 M ASYNCHRONOUS 3-STATE NO 1 mA 150 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-J42 Not Qualified e0 70 °C 42 PLASTIC/EPOXY SOJ SOJ42,.44 RECTANGULAR SMALL OUTLINE YES TIN LEAD J BEND 1.27 mm DUAL 3.76 mm 27.06 mm 10.16 mm SK HYNIX INC SOJ SOJ, SOJ42,.44 42 compliant EAR99 8542.32.00.02
KM416V4004AS-5
 Samsung Semiconductor 		Check for Price No No Obsolete 67.1089 Mbit 16 4MX16 3.3 V 50 ns 8192 FAST PAGE WITH EDO EDO DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH COMMON 1 1 4000000 4.1943 M ASYNCHRONOUS 3-STATE NO 500 µA 150 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G50 Not Qualified e0 70 °C 50 PLASTIC/EPOXY TSOP2 TSOP50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP50,.46,32 50 unknown EAR99 8542.32.00.02
K4E170411D-F5000
 Samsung Semiconductor 		Check for Price Active 16.7772 Mbit 4 4MX4 5 V 50 ns FAST PAGE WITH EDO EDO DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1 1 4000000 4.1943 M ASYNCHRONOUS 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-G24 70 °C 24 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 1.27 mm DUAL 1.2 mm 17.14 mm 7.62 mm SAMSUNG SEMICONDUCTOR INC TSOP2, compliant EAR99 8542.32.00.02
MC-421000B8A-10
 NEC Electronics America Inc 		Check for Price Obsolete 8.3886 Mbit 8 1MX8 5 V 100 ns 512 NIBBLE DRAM MODULE RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1 1 1000000 1.0486 M ASYNCHRONOUS 3-STATE 5.5 V 4.5 V CMOS COMMERCIAL R-XSMA-T30 Not Qualified 70 °C 30 UNSPECIFIED RECTANGULAR MICROELECTRONIC ASSEMBLY NO THROUGH-HOLE SINGLE NEC ELECTRONICS AMERICA INC SIMM-30 unknown
HY51V65404JC-60
 SK Hynix Inc 		Check for Price Obsolete 67.1089 Mbit 4 16MX4 3.3 V 60 ns 4096 FAST PAGE WITH EDO EDO DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1 1 16000000 16.7772 M ASYNCHRONOUS 3-STATE 3.6 V 3 V CMOS COMMERCIAL R-PDSO-J32 Not Qualified 70 °C 32 PLASTIC/EPOXY SOJ RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL 3.76 mm 20.96 mm 10.16 mm SK HYNIX INC SOJ SOJ, 32 unknown EAR99 8542.32.00.02
WPDE4M4VB-60MJMR
 White Microelectronics 		Check for Price Obsolete 16.7772 Mbit 4 4MX4 3.3 V 60 ns FAST PAGE WITH EDO EDO DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1 1 4000000 4.1943 M ASYNCHRONOUS 3.6 V 3 V CMOS MILITARY R-PDSO-J24 Not Qualified 125 °C -55 °C 24 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE YES J BEND DUAL WHITE MICROELECTRONICS unknown
IS41LV16100-50T
 Integrated Silicon Solution Inc 		Check for Price No Obsolete 16.7772 Mbit 16 1MX16 3.3 V 50 ns 1024 FAST PAGE WITH EDO EDO DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH COMMON 1 1 1000000 1.0486 M ASYNCHRONOUS 3-STATE YES 2 mA 160 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G44 Not Qualified e0 70 °C 44 PLASTIC/EPOXY TSOP2 TSOP44/50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 800 µm DUAL 1.2 mm 18.415 mm 10.16 mm INTEGRATED SILICON SOLUTION INC TSOP2 0.400 INCH, PLASTIC, TSOP2-50/44 50 unknown EAR99 8542.32.00.02
HM5117805BTS-7
 Hitachi Ltd 		Check for Price Obsolete 16.7772 Mbit 8 2MX8 5 V 70 ns FAST PAGE WITH EDO EDO DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1 1 2000000 2.0972 M ASYNCHRONOUS 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-G28 Not Qualified 70 °C 28 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 1.27 mm DUAL 1.2 mm 18.41 mm 7.62 mm HITACHI LTD TSOP TSOP2, 28 unknown EAR99 8542.32.00.02
MT4LC4M4G6DJ-7
 Micron Technology Inc 		Check for Price Obsolete 16.7772 Mbit 4 4MX4 3.3 V 70 ns 2048 FAST PAGE WITH EDO EDO DRAM RAS ONLY/CAS BEFORE RAS REFRESH 1 1 4000000 4.1943 M ASYNCHRONOUS 3-STATE 3.47 V 3.13 V CMOS COMMERCIAL R-PDSO-J24 Not Qualified 70 °C 24 PLASTIC/EPOXY SOJ RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL 3.61 mm 17.17 mm 7.67 mm MICRON TECHNOLOGY INC SOJ SOJ, 24 unknown EAR99 8542.32.00.02
MM5290J055
 National Semiconductor Corporation 		Check for Price No Obsolete 16.384 kbit 1 16KX1 250 ns 128 PAGE MODE DRAM SEPARATE 16000 16.384 k 3-STATE MOS COMMERCIAL R-XDIP-T16 Not Qualified e0 55 °C 16 CERAMIC DIP DIP16,.3 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL NATIONAL SEMICONDUCTOR CORP compliant EAR99 8542.32.00.02
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