Parametric results for: zxmn6a08g under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 6

6 hits Apply

Drain Current-Max (ID) (1)

3.8 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

80 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

24.1 pF 2

6 hits Apply

TO-261AA 4

6 hits Apply

R-PDSO-G4 6

6 hits Apply

e3 6

6 hits Apply

Manufacturer (2)

Diodes Incorporated 4 Zetex / Diodes Inc 2

6 hits Apply

1 6

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

4 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 4

6 hits Apply

-55.0 °C 2

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Active 4 Transferred 2

6 hits Apply

No 1

6 hits Apply

260 6

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

3.9 W 2

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply