Part # | Manufacturer | Description | Stock | Price | Buy | |
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FF50R12RT4HOSA1
DISTI #
13AC8660
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Infineon Technologies AG | Igbt, Module, N-Ch, 1.2Kv, 50A, Transistor Polarity:N Channel, Dc Collector Current:50A, Collector Emitter Saturation Voltage Vce(On):1.85V, Power Dissipation Pd:285W, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FF50R12RT4HOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk FF50R12RT4HOSA1 Part Details | 0 | Buy Now FF50R12RT4HOSA1 Part Details |
Part # | Manufacturer | Description | Stock | Price | Buy | |
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Infineon Technologies AG | FF50R12 - Insulated Gate Bipolar Transistor Module RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 FF50R12RT4HOSA1 Part Details | 5753 |
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$63.6700 / $74.9100 | Buy Now FF50R12RT4HOSA1 Part Details |