Bristol Electronics
| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R Min Qty: 1 SI2316DS-T1-GE3 Part Details | 459 |
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$0.2400 / $0.7500 | Buy Now SI2316DS-T1-GE3 Part Details |
Quest Components
| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| Vishay Intertechnologies | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2.9A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236 SI2316DS-T1-E3 Part Details | 1351 |
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$1.3670 / $3.6452 | Buy Now SI2316DS-T1-E3 Part Details | |
| Vishay Siliconix | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2.9A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236 SI2316DS-T1-E3 Part Details | 580 |
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$0.2741 / $0.5874 | Buy Now SI2316DS-T1-E3 Part Details | |
| Vishay Intertechnologies | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2.9A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236 SI2316DS-T1-GE3 Part Details | 367 |
|
$0.4500 / $0.9000 | Buy Now SI2316DS-T1-GE3 Part Details | |
| Vishay Intertechnologies | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2.9A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236 (Also Known As: SI2316DS) SI2316DS-T1-GE3 Part Details | 367 |
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$0.4500 / $0.9000 | Buy Now SI2316DS-T1-GE3 Part Details | |
| Vishay Intertechnologies | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2.9A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236 (Also Known As: SI2316DS) SI2316DS-T1-GE3 Part Details | 367 |
|
$0.3000 / $1.0000 | Buy Now SI2316DS-T1-GE3 Part Details | |
| Vishay Intertechnologies | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2.9A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236 SI2316DS-T1-GE3 Part Details | 367 |
|
$0.3000 / $1.0000 | Buy Now SI2316DS-T1-GE3 Part Details |
ComSIT USA
| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| Vishay Intertechnologies | N-CHANNEL 30-V (D-S) MOSFET Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 ECCN: EAR99 RoHS: Compliant SI2316DST1E3 Part Details |
|
RFQ SI2316DST1E3 Part Details |
Win Source Electronics
| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| Vishay Huntington | MOSFET N-CH 30V 2.9A SOT23-3 SI2316DS-T1-GE3 Part Details | 5470 |
|
$0.5141 / $0.6604 | Buy Now SI2316DS-T1-GE3 Part Details | |
| Vishay Huntington | MOSFET N-CH 30V 2.9A SOT23-3 SI2316DS-T1-E3 Part Details | 3000 |
|
$0.9849 / $1.4773 | Buy Now SI2316DS-T1-E3 Part Details |
Unikey Electronic Pte Ltd
| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| VBsemi Electronics Co Ltd | TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。NChannel,30V,6.5A,RDS(ON),30mΩ@10V,33mΩ@4.5V,20Vgs(±V), 1.7Vth(V)encapsulation:SOT23-3Features Low On-Resistance、High current capability、,、。 Min Qty: 130 Date Code: 26+ SI2316DS-T1-GE3-VB Part Details | 400000 |
|
$0.0394 / $0.0427 | Buy Now SI2316DS-T1-GE3-VB Part Details | |
| HXY | ID:4A,VDSS:30V,RDON:29mR,VGS:20V,TYPE:NChannel, Min Qty: 3000 Date Code: 26+ SI2316DS-T1-E3-HXY Part Details | 360000 |
|
$0.0625 / $0.0653 | Buy Now SI2316DS-T1-E3-HXY Part Details | |
| HXY | ID:4A,VDSS:30V,RDON:29mR,VGS:20V,TYPE:NChannel, Min Qty: 1 SI2316DS-T1-E3 Part Details | 10 |
|
$0.0759 / $0.1367 | Buy Now SI2316DS-T1-E3 Part Details | |
| VBsemi Electronics Co Ltd | SOT23;N—ChannelChannel,30V;6.5A;RDS(ON)=30mΩ@VGS=10V,VGS=20V;Vth=1.2~2.2V; Min Qty: 4 SI2316DS-T1-GE3 Part Details | 4 |
|
$0.0308 | Buy Now SI2316DS-T1-GE3 Part Details |
LCSC
| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| HXY | N-Channel 30V 4A 1W Surface Mount SOT-23 SI2316DS-T1-E3-HXY Part Details | 285 |
|
$0.0849 / $0.1709 | Buy Now SI2316DS-T1-E3-HXY Part Details |