There are no models available for this part yet.
Overview of 2N7306 by Harris Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Audio and Video Systems
CAD Models for 2N7306 by Harris Semiconductor
Part Data Attributes for 2N7306 by Harris Semiconductor
|
|
|
|---|---|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
HARRIS SEMICONDUCTOR
|
|
Package Description
|
FLANGE MOUNT, R-MSFM-P3
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
Additional Feature
|
RADIATION HARDENED
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
500 V
|
|
Drain Current-Max (ID)
|
12 A
|
|
Drain-source On Resistance-Max
|
0.41 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-258AA
|
|
JESD-30 Code
|
R-MSFM-P3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Package Body Material
|
METAL
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Form
|
PIN/PEG
|
|
Terminal Position
|
SINGLE
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for 2N7306
This table gives cross-reference parts and alternative options found for 2N7306. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7306, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB65R420CFDATMA1 | Power Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | 2N7306 vs IPB65R420CFDATMA1 |
| IPB65R420CFD | Power Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | 2N7306 vs IPB65R420CFD |
| 2N7306 | 12A, 500V, 0.41ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA | Intersil Corporation | 2N7306 vs 2N7306 |
| SIHD12N50E-GE3 | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | 2N7306 vs SIHD12N50E-GE3 |
| SPP12N50C3XKSA1 | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | 2N7306 vs SPP12N50C3XKSA1 |
| IPI60R385CPXKSA1 | Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | 2N7306 vs IPI60R385CPXKSA1 |
| SPP12N50C3HKSA1 | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | 2N7306 vs SPP12N50C3HKSA1 |
| IXFT12N50F | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXYS Corporation | 2N7306 vs IXFT12N50F |
| FCP9N60N | Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, TO-220, 800-TUBE | onsemi | 2N7306 vs FCP9N60N |
| IXFT12N50F | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | Littelfuse Inc | 2N7306 vs IXFT12N50F |