Datasheets
IPP60R385CPXKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Part Details for IPP60R385CPXKSA1 by Infineon Technologies AG

Overview of IPP60R385CPXKSA1 by Infineon Technologies AG

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Price & Stock for IPP60R385CPXKSA1

Part # Distributor Description Stock Price Buy
DISTI # 448-IPP60R385CPXKSA1-ND
DigiKey MOSFET N-CH 650V 9A TO220-3 Min Qty: 500 Lead time: 15 Weeks Container: Tube Limited Supply - Call
  • 500 $1.5143
$1.5143 Buy Now
DISTI # IPP60R385CPXKSA1
Avnet Americas Trans MOSFET N-CH 650V 9A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IPP60R385CPXKSA1) RoHS: Not Compliant Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Container: Tube 0
  • 500 $1.5448
  • 600 $1.4994
  • 1,100 $1.4539
  • 2,500 $1.4085
  • 5,000 $1.3631
  • 25,000 $1.3176
  • 50,000 $1.2722
$1.2722 / $1.5448 Buy Now
Future Electronics N-Channel 650 V 0.385 Ohm CoolMOSTM Power Transistor - PG-TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks Container: Tube 0
Tube
  • 50 $1.5600
  • 1,000 $1.5400
  • 1,500 $1.5300
  • 2,000 $1.5200
  • 2,500 $1.4900
$1.4900 / $1.5600 Buy Now
Quest Components   720
  • 1 $3.3320
  • 258 $1.0829
  • 555 $1.0413
$1.0413 / $3.3320 Buy Now
Rochester Electronics IPP60R385 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 1525
  • 1 $1.3300
  • 25 $1.3000
  • 100 $1.2500
  • 500 $1.1900
  • 1,000 $1.1300
$1.1300 / $1.3300 Buy Now
DISTI # IPP60R385CPXKSA1
TME Transistor: N-MOSFET, unipolar, 600V, 9A, 83W, PG-TO220-3 Min Qty: 1 0
  • 1 $3.1800
  • 3 $2.8700
  • 10 $2.5100
  • 50 $2.1800
$2.1800 / $3.1800 RFQ
DISTI # SP000082281
EBV Elektronik Power MOSFET, N Channel, 650 V, 9 A, 350Milliohms, TO-220, 3 Pins, Through Hole (Alt: SP000082281) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPP60R385CPXKSA1

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IPP60R385CPXKSA1 Part Data Attributes

IPP60R385CPXKSA1 Infineon Technologies AG
Buy Now Datasheet
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IPP60R385CPXKSA1 Infineon Technologies AG Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 227 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.385 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 27 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPP60R385CPXKSA1

This table gives cross-reference parts and alternative options found for IPP60R385CPXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP60R385CPXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPP60R385CP Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP60R385CPXKSA1 vs IPP60R385CP
Part Number Description Manufacturer Compare
SIHD12N50E-GE3 Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 Vishay Intertechnologies IPP60R385CPXKSA1 vs SIHD12N50E-GE3
IPP60R385CP Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP60R385CPXKSA1 vs IPP60R385CP
FCP360N65S3R0 Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, TO-220, 800-TUBE onsemi IPP60R385CPXKSA1 vs FCP360N65S3R0
2N7306 12A, 500V, 0.41ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA Intersil Corporation IPP60R385CPXKSA1 vs 2N7306
IPI60R385CPXKSA1 Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPP60R385CPXKSA1 vs IPI60R385CPXKSA1
IXFT12N50F Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN Littelfuse Inc IPP60R385CPXKSA1 vs IXFT12N50F

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