Datasheets
IRF7805PBF by:

Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8

Part Details for IRF7805PBF by Infineon Technologies AG

Overview of IRF7805PBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRF7805PBF

Part # Distributor Description Stock Price Buy
DISTI # IRF7805PBF-ND
DigiKey MOSFET N-CH 30V 13A 8SO Lead time: 98 Weeks Container: Tube Limited Supply - Call
Buy Now
DISTI # IRF7805PBF
Avnet Americas Trans MOSFET N-CH 30V 13A 8-Pin SOIC - Rail/Tube (Alt: IRF7805PBF) RoHS: Compliant Min Qty: 3800 Package Multiple: 3800 Container: Tube 0
RFQ
DISTI # 70017593
RS MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 9.2 Milliohms, ID 13A, SO-8,PD 2.5W, VGS +/-12V | Infineon IRF7805PBF RoHS: Not Compliant Min Qty: 3800 Package Multiple: 1 Container: Bulk 0
  • 3,800 $1.1100
  • 19,000 $1.0600
  • 38,000 $1.0000
  • 380,000 $0.9500
  • 950,000 $0.8900
$0.8900 / $1.1100 RFQ
Bristol Electronics   759
RFQ
Rochester Electronics IRF7805 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 1457
  • 1 $0.4667
  • 25 $0.4574
  • 100 $0.4387
  • 500 $0.4200
  • 1,000 $0.3967
$0.3967 / $0.4667 Buy Now

Part Details for IRF7805PBF

IRF7805PBF CAD Models

IRF7805PBF Part Data Attributes:

IRF7805PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF7805PBF Infineon Technologies AG Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description LEAD FREE, SOP-8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Infineon
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.011 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7805PBF

This table gives cross-reference parts and alternative options found for IRF7805PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7805PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7805HR Power Field-Effect Transistor, 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7805PBF vs IRF7805HR
IRF7805TR Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7805PBF vs IRF7805TR
IRF7805ATRPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7805PBF vs IRF7805ATRPBF
IRF7805A Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7805PBF vs IRF7805A
IRF7805TRPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7805PBF vs IRF7805TRPBF
IRF7805 Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7805PBF vs IRF7805
IRF7805APBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7805PBF vs IRF7805APBF
IRF7805 Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7805PBF vs IRF7805
IRF7805ATR Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7805PBF vs IRF7805ATR
Part Number Description Manufacturer Compare
IRF7413ZPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7805PBF vs IRF7413ZPBF
IRF7811W Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7805PBF vs IRF7811W
IRF7413GPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 Infineon Technologies AG IRF7805PBF vs IRF7413GPBF
IRF7811WTR Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7805PBF vs IRF7811WTR
IRF7413ZGPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 Infineon Technologies AG IRF7805PBF vs IRF7413ZGPBF
IRF7413TRPBF-1 Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET, Infineon Technologies AG IRF7805PBF vs IRF7413TRPBF-1
RSS130N03TB Power Field-Effect Transistor, 13A I(D), 30V, 0.0111ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 ROHM Semiconductor IRF7805PBF vs RSS130N03TB
IRF7413UPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7805PBF vs IRF7413UPBF
IRF7811WPBF Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7805PBF vs IRF7811WPBF
RSS130N03 Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 ROHM Semiconductor IRF7805PBF vs RSS130N03

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