Datasheets
IRF7811WPBF by: International Rectifier

Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8

Part Details for IRF7811WPBF by International Rectifier

Overview of IRF7811WPBF by International Rectifier

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Price & Stock for IRF7811WPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   1200
RFQ
Quest Components 14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA 1
  • 1 $0.7425
$0.7425 Buy Now
Quest Components 14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA 151
  • 1 $1.2375
  • 21 $0.7425
  • 82 $0.6188
$0.6188 / $1.2375 Buy Now
Quest Components 14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA 960
  • 1 $1.2600
  • 80 $0.6300
  • 318 $0.5040
$0.5040 / $1.2600 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 19
  • 1 $1.1500
  • 100 $0.8700
  • 1,000 $0.7500
$0.7500 / $1.1500 Buy Now

Part Details for IRF7811WPBF

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IRF7811WPBF Part Data Attributes:

IRF7811WPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF7811WPBF International Rectifier Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code SOIC
Package Description LEAD FREE, SOP-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 109 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7811WPBF

This table gives cross-reference parts and alternative options found for IRF7811WPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7811WPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7811W Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7811WPBF vs IRF7811W
IRF7811WTR Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7811WPBF vs IRF7811WTR
IRF7811WGPBF Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 International Rectifier IRF7811WPBF vs IRF7811WGPBF
Part Number Description Manufacturer Compare
IRF7413ZPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7811WPBF vs IRF7413ZPBF
IRF7811W Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7811WPBF vs IRF7811W
IRF7413GPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 Infineon Technologies AG IRF7811WPBF vs IRF7413GPBF
IRF7811WTR Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7811WPBF vs IRF7811WTR
IRF7805PBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 Infineon Technologies AG IRF7811WPBF vs IRF7805PBF
IRF7413ZGPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 Infineon Technologies AG IRF7811WPBF vs IRF7413ZGPBF
IRF7413TRPBF-1 Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET, Infineon Technologies AG IRF7811WPBF vs IRF7413TRPBF-1
RSS130N03TB Power Field-Effect Transistor, 13A I(D), 30V, 0.0111ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 ROHM Semiconductor IRF7811WPBF vs RSS130N03TB
IRF7413UPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7811WPBF vs IRF7413UPBF
RSS130N03 Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 ROHM Semiconductor IRF7811WPBF vs RSS130N03

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