Part Details for M12L128168A-6TG2S by Elite Semiconductor Memory Technology Inc
Overview of M12L128168A-6TG2S by Elite Semiconductor Memory Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Part Details for M12L128168A-6TG2S
M12L128168A-6TG2S CAD Models
M12L128168A-6TG2S Part Data Attributes:
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M12L128168A-6TG2S
Elite Semiconductor Memory Technology Inc
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Datasheet
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M12L128168A-6TG2S
Elite Semiconductor Memory Technology Inc
DRAM,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Date Of Intro | 2017-08-18 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 166 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G54 | |
Length | 22.22 mm | |
Memory Density | 134217728 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 8388608 words | |
Number of Words Code | 8000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 8MX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP54,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.2 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for M12L128168A-6TG2S
This table gives cross-reference parts and alternative options found for M12L128168A-6TG2S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M12L128168A-6TG2S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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M12L128168A-6TG2N | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | Elite Semiconductor Memory Technology Inc | M12L128168A-6TG2S vs M12L128168A-6TG2N |
K4S281632D-TI55 | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | M12L128168A-6TG2S vs K4S281632D-TI55 |
W9812G6GH-6 | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, 0.80 INCH PITCH, ROHS COMPLIANT, TSOP2-54 | Winbond Electronics Corp | M12L128168A-6TG2S vs W9812G6GH-6 |
K4S281632F-TL600 | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, TSOP2-54 | Samsung Semiconductor | M12L128168A-6TG2S vs K4S281632F-TL600 |
VG36128161BT-6 | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Vanguard International Semiconductor Corporation | M12L128168A-6TG2S vs VG36128161BT-6 |
AS4C8M16S-6TCN | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 | Alliance Memory Inc | M12L128168A-6TG2S vs AS4C8M16S-6TCN |
AS4C8M16SA-6TIN | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 | Alliance Memory Inc | M12L128168A-6TG2S vs AS4C8M16SA-6TIN |
K4S281632D-TL550 | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | M12L128168A-6TG2S vs K4S281632D-TL550 |
K4S281632I-UL600 | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | Samsung Semiconductor | M12L128168A-6TG2S vs K4S281632I-UL600 |
K4S281632F-UC600 | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, LEAD FREE, TSOP2-54 | Samsung Semiconductor | M12L128168A-6TG2S vs K4S281632F-UC600 |